SMK0160IS

SMK0160IS Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage: BVDSS=600V (Min.) Low gate charge: Qg=3.9nC (Typ.) Low drain-source On resistance: RDS(on)=11.5Ω (Max.) 100% avalanche tested RoHS compliant device Ordering Information Part Number SMK0160IS Marking SMK0160 Package I-PAK (Short Lead) GDS I-PAK Marking Information SMK 0160 YWW Column 1, 2: Device Code Column 3: Production Information e.g.) YWW -. Y: Year Code -. WW: Week Code Absolute maximum ratings (TC=25°C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) * Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Junction temperature Storage temperature range VDSS VGSS ID Tc=25°C Tc=100°C IDM EAS IAR EAR PD TJ Tstg * Limited only maximum junction temperature Rev. date: ...