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SMK0260IS Dataheets PDF



Part Number SMK0260IS
Manufacturers KODENSHI KOREA
Logo KODENSHI KOREA
Description Advanced N-Ch Power MOSFET
Datasheet SMK0260IS DatasheetSMK0260IS Datasheet (PDF)

SMK0260IS Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features • Drain-Source breakdown voltage: BVDSS=600V (Min.) • Low gate charge: Qg=7nC (Typ.) • Low drain-source On resistance: RDS(on)=3.9Ω (Typ.) • 100% avalanche tested • RoHS compliant device Ordering Information Part Number SMK0260IS Marking SMK0260 Package I-PAK (Short Lead) GDS I-PAK Marking Information SMK 0260 YWW Column 1, 2: Device Code Column 3: Production Information e.g.) YWW -. Y: Year Code -. WW: Week.

  SMK0260IS   SMK0260IS


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SMK0260IS Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features • Drain-Source breakdown voltage: BVDSS=600V (Min.) • Low gate charge: Qg=7nC (Typ.) • Low drain-source On resistance: RDS(on)=3.9Ω (Typ.) • 100% avalanche tested • RoHS compliant device Ordering Information Part Number SMK0260IS Marking SMK0260 Package I-PAK (Short Lead) GDS I-PAK Marking Information SMK 0260 YWW Column 1, 2: Device Code Column 3: Production Information e.g.) YWW -. Y: Year Code -. WW: Week Code Absolute maximum ratings (TC=25°C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) * Avalanche current (Note 2) Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Junction temperature Storage temperature range VDSS VGSS ID Tc=25°C Tc=100°C IDM IAS EAS IAR EAR PD TJ Tstg * Limited only maximum junction temper.


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