Advanced N-Ch Trench MOSFET
SNN0310Q
Advanced N-Ch Trench MOSFET
100V, 3A N-Channel Power Trench MOSFET
Features
Max. RDS(ON) = 150m at VGS = 1...
Description
SNN0310Q
Advanced N-Ch Trench MOSFET
100V, 3A N-Channel Power Trench MOSFET
Features
Max. RDS(ON) = 150m at VGS = 10V, ID = 2A Low gate charge: Qg=18nC (Typ.) High performance trench technology for extremely low RDS(on) 100% avalanche tested
Halogen free and RoHS compliant device
Ordering Information
Part Number
Marking
Package
G D S
SNN0310Q
SNN0310Q
SOT-223
D
SOT-223
Marking Information
SNN0310Q YWW
Column 1: Device Code Column 2: Production Information e.g.) YWW
-. Y: Year Code
-. WW: Week Code
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage Gate-source voltage
Drain current (DC) *
Drain current (Pulsed) * Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Junction temperature Storage temperature range
VDSS
VGSS
ID
Tc=25C Tc=100C
IDM
EAS
IAR
EAR
PD
TJ
Tstg
* Limited only maximum junction te...
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