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SMN18T50FD
Advanced N-Ch Power MOSFET
Description
SMN18T50FD Advanced N-Ch Power MOSFET SWITCHING
REGULATOR
APPLICATION Features Drain-Source breakdown voltage: BVDSS = 500V Low gate charge: Qg=65nC (Typ.) Low drain-source On resistance: RDS(on)=0.21Ω (Typ.) 100% avalanche tested RoHS compliant device Ordering Information Part Number Marking Package SMN18T50FD SMN18T50 TO-220F-3L GDS TO-...
KODENSHI KOREA
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SMN18T50FD
Advanced N-Ch Power MOSFET
- KODENSHI KOREA
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