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AO3413
20V P-Channel MOSFET
General Description
The AO3413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.
Features
VDS = -20V ID = -3A RDS(ON) < 80mΩ RDS(ON) < 100mΩ
RDS(ON) < 130mΩ
(VGS = -4.5V) (VGS =- 4.5V)-15
(VGS = -2.5V) (VGS = -1.8V)
SOT23
Top View
Bottom View
D D
D
S G
G S
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID IDM
TA=25°C Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum -20 ±8 -3 -2.4 -15 1.4 0.9
-55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJL
Typ 70 100 6.