Power Transistors
2SC5418
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
15.5±0.5
...
Power
Transistors
2SC5418
Silicon
NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
15.5±0.5
3.0±0.3
s Features
φ3.2±0.1
2.0 1.2 10.0 26.5±0.5
4.5
q High breakdown voltage, and high reliability through the use of a
5°
5°
glass passivation layer
q High-speed switching
23.4 22.0±0.5
q Wide area of safe operation (ASO)
5° 5°
4.0
/ s Absolute Maximum Ratings (TC=25˚C)
2.0±0.2
5°
1.1±0.1
e ) Parameter
Symbol
Ratings
Unit
2.0 18.6±0.5
c type Collector to base voltage
VCBO
1700
V
n d stage. tinued Collector to emitter voltage
VCES
3.3±0.3
0.7±0.1
1700
V
le n VCEO
600
V
a elifecyc disco Emitter to base voltage
VEBO
2.0 5.5±0.3
5
V
n u t ed, Peak collector current
ICP
30
A
roduc d typ Collector current
IC
20
A
te tin urP tinue Basecurrent
IB
10
A
fo on Collector power TC=25°C
wing disc dissipation
Ta=25°C
PC
100 W
3.5
in n follo ned Junction temperature
des , pla Storage temperature
Tj
150
˚C
Tstg
–55 to +150
˚C
5.45±0.3 5°
5.45±0.3
0.7±0.1
123
1:Base 2:Collector 3:Emitter TOP–3E Full Pack Package
a co s tinued incalnuce type Electrical Characteristics (TC=25˚C)
M is con inten Parameter
Symbol
ce/Dis pe, ma Collector cutoff current
ICBO
Dintenan nce ty Emitter cutoff current
Ma tena Forward current transfer ratio ain Collector to emitter saturation voltage ed m Base to emitter saturation voltage (plan Transition frequency
IEBO hFE VCE(sat) VBE(sat) fT
Conditions VCB = 1000V, IE = 0 ...
