FCPF850N80Z

FCPF850N80Z — N-Channel SuperFET® II MOSFET August 2015 FCPF850N80Z N-Channel SuperFET® II MOSFET 800 V, 8 A, 850 mΩ Features Typ. RDS(on) = 710 mΩ (Typ.) Ultra Low Gate Charge (Typ. Qg = 22 nC) Low Eoss (Typ. 2.3 uJ @ 400V) Low Effective Output Capacitance (Typ. Coss(eff.) = 106 pF) 100% Avalanche Tested RoHS Compliant ESD Improved Capability Applications Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power an...