FCP170N60

FCP170N60 — N-Channel SuperFET® II MOSFET September 2014 FCP170N60 N-Channel SuperFET® II MOSFET 600 V, 22 A, 170 mΩ Features 650 V @TJ = 150°C Typ. RDS(on) = 150 mΩ Ultra Low Gate Charge (Typ. Qg = 42 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 190 pF) 100% Avalanche Tested RoHS Compliant Applications Telecom / Sever Power Supplies Industrial Power Supplies AC-DC Power Supply Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency. D GDS TO-220 G Absolute M...