FCP130N60

FCP130N60 — N-Channel SuperFET® II MOSFET FCP130N60 N-Channel SuperFET® II MOSFET 600 V, 28 A, 130 mΩ September 2014 Features 650 V @ TJ = 150°C Typ. RDS(on) = 112 mΩ Ultra Low Gate Charge (Typ. Qg = 54 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 240 pF) 100% Avalanche Tested RoHS Compliant Applications Telecom / Sever Power Supplies Industrial Power Supplies Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency. D GDS TO-220 G S Absolute Maximum Ratings TC =...