MOSFET
FDP22N50N — N-Channel UniFETTM II MOSFET
FDP22N50N
N-Channel UniFETTM II MOSFET
500 V, 22 A, 220 mΩ
Features
• RDS(on) ...
Description
FDP22N50N — N-Channel UniFETTM II MOSFET
FDP22N50N
N-Channel UniFETTM II MOSFET
500 V, 22 A, 220 mΩ
Features
RDS(on) = 185 mΩ (Typ.) @ VGS = 10 V, ID = 11 A Low Gate Charge (Typ. 49 nC) Low Crss (Typ. 24 pF) 100% Avalanche Tested Improve dv/dt Capability RoHS Compliant
Applications
PDP TV Lighting Uninterruptible Power Supply AC-DC Power Supply
November 2013
Description
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic...
Similar Datasheet
- FDP22N50N MOSFET - Fairchild Semiconductor