MOSFET
FDP032N08B — N-Channel PowerTrench® MOSFET
FDP032N08B
N-Channel PowerTrench® MOSFET
80 V, 211 A, 3.3 mΩ
November 2013
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Description
FDP032N08B — N-Channel PowerTrench® MOSFET
FDP032N08B
N-Channel PowerTrench® MOSFET
80 V, 211 A, 3.3 mΩ
November 2013
Features
RDS(on) = 2.85 mΩ (Typ.) @ VGS = 10 V, ID = 50 A Low FOM RDS(on) * QG Low Reverse-Recovery Charge, Qrr Soft Reverse-Recovery Body Diode Enables High Efficiency in Synchronous Rectification Fast Switching Speed 100% UIL Tested RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies Renewable System
D
GDS TO-220
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS VGSS
ID
IDM EAS dv/dt
PD
TJ, TSTG TL
Parameter
Drain to Source Voltage
Gate to Source Voltage Dra...
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