FDP030N06B_F102

FDP030N06B_F102 — N-Channel PowerTrench® MOSFET FDP030N06B_F102 N-Channel PowerTrench® MOSFET 60 V, 195 A, 3.1 mΩ November 2013 Features RDS(on) = 2.67 mΩ (Typ.) @ VGS = 10 V, ID = 100 A Low FOM RDS(on) * QG Low Reverse-Recovery Charge, Qrr = 78 nC Soft Reverse-Recovery Body Diode Enables High Efficiency in Synchronous Rectification Fast Switching Speed 100% UIL Tested RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies Renewable System D GDS TO-220 G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate ...