FDB024N04AL7 N-Channel PowerTrench® MOSFET
June 2014
FDB024N04AL7
N-Channel PowerTrench® MOSFET
40 V, 219 A, 2.4 mΩ
Features
RDS(on) = 2.0 mΩ (Typ.)@ VGS = 10 V, ID = 80 A Fast Switching Speed
Low Gate Charge
High Performance Trench Technology for Extremely Low RDS(on)
High Power and Current Handling Capability
RoHS Compliant
Description
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