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SMN0250F

Advanced N-Ch Power MOSFET

Description

SMN0250F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features  Drain-Source breakdown voltage: BVDSS=500V (Min.)  Low gate charge: Qg=7nC (Typ.)  Low drain-source On resistance: RDS(on)=3.4Ω (Max.)  100% avalanche tested  RoHS compliant device Ordering Information Part Number Marking Package SMN0250F SMN0250 TO-220F-3L GDS TO-22...

AUK

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SMN0250F Advanced N-Ch Power MOSFET - AUK

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