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FDMS36101L_F085 N-Channel Power Trench® MOSFET
FDMS36101L_F085
N-Channel Power Trench® MOSFET
100V, 38A, 26mΩ
June 2013
Features
Typ rDS(on) = 18mΩ at VGS = 10V, ID = 20A Typ Qg(tot) = 70nC at VGS = 10V, ID = 20A UIS Capability RoHS Compliant Qualified to AEC Q101
Applications
Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/alternator Primary Switch for 12V Systems
For current package drawing, please refer to the Fairchild website at www.fairchildsemi.com/packaging
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted
Symbol
Parameter
VDSS VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous (VGS=10) (Note 1) Pulsed Drain Current
EAS Single Pulse Avalanche Energy
PD
Power Dissipation Derate above 25oC
TJ, TSTG RθJC RθJA
Operating and Storage Temperature Thermal Resistance Junction to Case Maximum Thermal Resistance Junction to Ambient
TC = 25°C TC = 25°C
(No.