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FDP023N08B Dataheets PDF



Part Number FDP023N08B
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description MOSFET
Datasheet FDP023N08B DatasheetFDP023N08B Datasheet (PDF)

FDP023N08B — N-Channel PowerTrench® MOSFET FDP023N08B N-Channel PowerTrench® MOSFET 75 V, 242 A, 2.35 mΩ November 2013 Features • RDS(on) = 1.96 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A • Low FOM RDS(on)*QG • Low Reverse Recovery Charge, Qrr • Soft Reverse Recovery Body Diode • Enables Highly Efficiency in Synchronous Rectification • Fast Switching Speed • 100% UIL Tested • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process th.

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FDP023N08B — N-Channel PowerTrench® MOSFET FDP023N08B N-Channel PowerTrench® MOSFET 75 V, 242 A, 2.35 mΩ November 2013 Features • RDS(on) = 1.96 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A • Low FOM RDS(on)*QG • Low Reverse Recovery Charge, Qrr • Soft Reverse Recovery Body Diode • Enables Highly Efficiency in Synchronous Rectification • Fast Switching Speed • 100% UIL Tested • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications • Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • DC motor Drives and Uninterruptible Power Supplies • Micro Solar Inverte D GDS TO-220 G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS VGSS ID IDM EAS dv/dt PD Drain to Source Voltage Gate to Source Voltage Drain .


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