FDB082N15A — N-Channel PowerTrench® MOSFET
April 2015
FDB082N15A
N-Channel PowerTrench® MOSFET
150 V, 117 A, 8.2 mΩ
Features
RDS(on) = 6.7 mΩ (Typ.) @ VGS = 10 V, ID = 75 A Fast Switching Speed Low Gate Charge, QG = 64.5 nC (Typ.) High Performance Trench Technology for Extremely Low
RDS(on) High Power and Current Handling Capability RoHS Compl...
