FDD390N15ALZ

FDD390N15ALZ — N-Channel PowerTrench® MOSFET FDD390N15ALZ N-Channel PowerTrench® MOSFET 150 V, 26 A, 42 m January 2014 Features RDS(on) = 33.4 m (Typ.) @ VGS = 10 V, ID = 26 A RDS(on) = 42.2 m (Typ.) @ VGS = 4.5 V, ID = 20 A Fast Switching Speed Low Gate Charge, QG = 17.6 nC (Typ.) High Performance Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications Consumer Applicances LED TV Synchronous Rectification Uninterruptible Power Supplies Micro Solar Inverter G S D D-PAK D G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS dv/dt PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current...