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FDD850N10L — N-Channel PowerTrench® MOSFET
FDD850N10L
N-Channel PowerTrench® MOSFET
100 V, 15.7 A, 75 mΩ
November 2013
Features
• RDS(on) = 61 mΩ ( yp.) @ VGS = 10 V, ID = 12 A • RDS(on) = 64 mΩ (Typ.) @ VGS = 5 V, ID = 12 A • Low Gate Charge (Typ. 22.2 nC) • Low Crss (Typ. 42 pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance and maintain superior switching performance.
Application
• Consumer Appliances • LED TV and Monitor • Synchronous Rectification • Uninterruptible Power Supply • Micro Solar Inverter
D
G S
D
D-PAK
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
S
Symbol VDSS VGSS
ID
IDM EAS dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage Drain Current Drain Current
- Continuous (TC = 25oC) - Continuou.