FDD3860

FDD3860 N-Channel PowerTrench® MOSFET FDD3860 N-Channel PowerTrench® MOSFET 100 V, 29 A, 36 mΩ Features „ Max rDS(on) = 36 mΩ at VGS = 10 V, ID = 5.9 A „ High Performance Trench Technology for Extremely Low rDS(on) „ 100% UIL Tested „ RoHS Compliant September 2016 General Description This N-Channel MOSFET is rugged gate version of Fairchild Semiconductor‘s advanced Power Trench® process. This part is tailored for low rDS(on) and low Qg figure of merit, with avalanche ruggedness for a wide range of switching applications. Applications „ DC-AC Conversion „ Synchronous Rectifier G S D DT O-P-2A5K2 (T O -25 2) D G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25°C TA = 25°C Single Pulse Avalanche Energy Power Dissipation TC = 25°C Power Dissipation TA = 25°C Operating and Storage Junction Temperature R...