FDY1002PZ

FDY1002PZ Dual P-Channel (–1.5 V) Specified PowerTrench® MOSFET FDY1002PZ Dual P-Channel (–1.5 V) Specified PowerTrench® MOSFET October 2008 –20 V, –0.83 A, 0.5 Ω Features General Description „ Max rDS(on) = 0.5 Ω at VGS = –4.5 V, ID = –0.83 A „ Max rDS(on) = 0.7 Ω at VGS = –2.5 V, ID = –0.70 A „ Max rDS(on) = 1.2 Ω at VGS = –1.8 V, ID = –0.43 A „ Max rDS(on) = 1.8 Ω at VGS = –1.5 V, ID = –0.36 A „ HBM ESD protection level = 1400 V (Note 3) „ RoHS Compliant This Dual P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(on)@VGS = –1.5 V. Application „ Li-Ion Battery Pack 6 5 4 1 2 3 SC89-6 S1 1 G1 2 D2 3 6 D1 5 G2 4 S2 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Te...