FDG8842CZ

FDG8842CZ Complementary PowerTrench® MOSFET FDG8842CZ Complementary PowerTrench® MOSFET April 2007 tm Q1:30V,0.75A,0.4Ω; Q2:–25V,–0.41A,1.1Ω Features Q1: N-Channel „ Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A „ Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A Q2: P-Channel „ Max rDS(on) = 1.1Ω at VGS = –4.5V, ID = –0.41A „ Max rDS(on) = 1.5Ω at VGS = –2.7V, ID = –0.25A „ Very low level gate drive requirements allowing direct operation in 3V circuits(VGS(th) <1.5V) „ Very small package outline SC70-6 General Description These N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital F...