FDN86265P Datasheet

FDN86265P MOSFET

„ Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -0.8 A „ Max rDS(on) = 1.4 Ω at VGS = -6 V, ID = -0.7 A „ Very low RDS-on mid voltage P-channel silicon technology optimised for low Qg „ This product is optimised for fast switching applications as well as load switch applications „ 100% UIL tested „ RoHS.

Features

General Description „ Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -0.8 A „ Max rDS(on) = 1.4 Ω at VGS = -6 V, ID = -0.7 A „ Very low RDS-on mid voltage P-channel silicon technology optimised for low Qg „ This product is optimised for fast switching applications as well as load switch applications „ 100% UIL tested „ RoHS Compliant This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been optimized for the on-state resistance and yet maintain superior switching performance. Applications „ Active Clamp Switch „ Load Switch MOSFET Maximum Ratin.