Document
FDN86246 N-Channel PowerTrench® MOSFET
December 2010
FDN86246
N-Channel PowerTrench® MOSFET
150 V, 1.6 A, 261 m:
Features
General Description
Max rDS(on) = 261 m: at VGS = 10 V, ID = 1.6 A Max rDS(on) = 359 m: at VGS = 6 V, ID = 1.4 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used
surface mount package
Fast switching speed
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
Application
PD Switch
100% UIL tested
RoHS Compliant
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS
PD
TJ, TSTG
Parameter Drain to Source Voltage Gate to Source Voltage
-Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3) (Note 1.