FDT86244

FDT86244 N-Channel Shielded Gate PowerTrench® MOSFET January 2016 FDT86244 N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 2.8 A, 128 mΩ Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 128 mΩ at VGS = 10 V, ID = 2.8 A „ Max rDS(on) = 178 mΩ at VGS = 6 V, ID = 2.4 A „ High Performance Trench Technology for Extremely Low rDS(on) „ High Power and Current Handling Capability in a Widely Used Surface Mount Package „ Fast Switching Speed „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness. Applications „ Load Switch „ Primary Switch D SOT-223 S D G D GDS MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuo...