FDT86113LZ

FDT86113LZ N-Channel PowerTrench® MOSFET March 2011 FDT86113LZ N-Channel PowerTrench® MOSFET 100 V, 3.3 A, 100 m: Features General Description „ Max rDS(on) = 100 m: at VGS = 10 V, ID = 3.3 A „ Max rDS(on) = 145 m: at VGS = 4.5 V, ID = 2.7 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ HBM ESD protection level > 3 KV typical (Note 4) „ 100% UIL tested This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level. Application „ DC - DC Switch „ RoHS Compliant D SOT-223 S D G MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Conti...