FDT86106LZ

FDT86106LZ N-Channel PowerTrench® MOSFET FDT86106LZ N-Channel PowerTrench® MOSFET 100 V, 3.2 A, 108 mΩ Features General Description January 2013 „ Max rDS(on) = 108 mΩ at VGS = 10 V, ID = 3.2 A „ Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ HBM ESD protection level > 3 KV typical (Note 4) „ 100% UIL tested This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level. Application „ DC - DC Conversion „ RoHS Compliant D SOT-223 S D G MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Cur...