FDS8958B

FDS8958B Dual N & P-Channel PowerTrench® MOSFET FDS8958B Dual N & P-Channel PowerTrench® MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ November 2013 Features Q1: N-Channel „ Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.4 A „ Max rDS(on) = 39 mΩ at VGS = 4.5 V, ID = 5.2 A Q2: P-Channel „ Max rDS(on) = 51 mΩ at VGS = -10 V, ID = -4.5 A „ Max rDS(on) = 80 mΩ at VGS = -4.5 V, ID = -3.3 A „ HBM ESD protection level > 3.5 kV (Note 3) General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's advanced PowerTrench® process th at has been especially tailored to minimize on-state resistan ce and yet maintain superior switching performance. These devices are well suite d for low voltage and battery powered applications where low in-line power loss and fast switching are required. Application „ RoHS Compliant „ DC-DC Conversion „ BLU and motor drive inverter D2 ...