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FDS8935 Dual P-Channel PowerTrench® MOSFET
FDS8935
Dual P-Channel PowerTrench® MOSFET
-80 V, -2.1 A, 183 mΩ
November 2010
Features
General Description
Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A Max rDS(on) = 247 mΩ at VGS = -4.5 V, ID = -1.9 A High performance trench technology for extremely low rDS(on)
This P-channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been optimized for rDS(on), switching performance and ruggedness.
High power and current handling capability in a widely used surface mount package
100% UIL Tested RoHS Compliant
Applications
Load Switch Synchronous Rectifier
D2 D1 D1
D2
Pin 1
G2 S2 G1 S1
D2 55 D2 66 D1 77 D1 88
Q2 Q1
44 G2 33 S2 22 G1 11 S1
SO-8
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Ener.