FDMA86265P

FDMA86265P P-Channel PowerTrench® MOSFET August 2018 FDMA86265P P-Channel PowerTrench® MOSFET -150 V, -1 A, 1.2 Ω Features „ Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -1 A „ Max rDS(on) = 1.4 Ω at VGS = -6 V, ID = -0.9 A „ Low Profile - 0.8 mm maximum in the new package MicroFET 2x2 mm „ Very low RDS-on mid voltage P-channel silicon technology optimised for low Qg „ This product is optimised for fast switching applications as well as load switch applications „ 100% UIL tested „ RoHS Compliant General Description This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been optimized for the on-state resistance and yet maintain superior switching performance. Applications „ Active Clamp Switch „ Load Switch Pin 1 Drain DD G Source BBootttotomm DDraraininCCoonnta- ct DD DD DD S MicroFET 2X2 (Bottom View) G S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TA = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1a) (Note 1b) Ratings -150 ±25 -1 -2 6 2.4 0.9 -55 to + 150 Units V V A mJ W °C RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1a) (Not...