Dual N-Channel MOSFET
FDMB3900AN Dual N-Channel PowerTrench® MOSFET
FDMB3900AN
Dual N-Channel PowerTrench® MOSFET
25 V, 7.0 A, 23 mΩ
June 20...
Description
FDMB3900AN Dual N-Channel PowerTrench® MOSFET
FDMB3900AN
Dual N-Channel PowerTrench® MOSFET
25 V, 7.0 A, 23 mΩ
June 2013
Features
General Description
Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7.0 A Max rDS(on) = 33 mΩ at VGS = 4.5 V, ID = 5.5 A Fast switching speed
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process
that has been especially tailored to minimize the on-state
resistance and yet maintain superior switching performance.
Low gate charge High performance trench technology for extremely low rDS(on) High power and current handling capability
These devices are well suited for low voltage and battery powered applications where the low in-line power loss and fast switching are required.
RoHS Compliant
Pin 1 MicroFET 3X1.9
D2 5 D2 6 D1 7 D1 8
Q2
4 G2
3 S2
Q1
2 G1
1 S1
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS ID
PD TJ, TSTG
Parameter
Drain to Source ...
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