FDMC86570LET60

FDMC86570LET60 N-Channel Shielded Gate PowerTrench® MOSFET January 2015 FDMC86570LET60 N-Channel Shielded Gate PowerTrench® MOSFET 60 V, 87 A, 4.3 mΩ Features „ Extended TJ rating to 175°C „ Shielded Gate MOSFET Technology „ Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A „ Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 15 A „ High performance technology for extremely low rDS(on) „ Termination is Lead-free „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. Application „ DC-DC Conversion „ Pin 1 Pin 1 SS SG S S D D D DD D SD GD Top PPoowweerr 3333 Bottom MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous ...