MOSFET
FDBL0110N60 N-Channel PowerTrench® MOSFET
FDBL0110N60
N-Channel PowerTrench® MOSFET
60 V, 300 A, 1.1 mΩ
January 2016
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Description
FDBL0110N60 N-Channel PowerTrench® MOSFET
FDBL0110N60
N-Channel PowerTrench® MOSFET
60 V, 300 A, 1.1 mΩ
January 2016
Features
Typical RDS(on) = 0.85 mΩ at VGS = 10V, ID = 80 A Typical Qg(tot) = 170 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant
Applications
Industrial Motor Drive Industrial Power Supply Industrial Automation Battery Operated tools Battery Protection Solar Inverters UPS and Energy Inverters Energy Storage Load Switch
D
G
S For current package drawing, please refer to the Fairchild website at https://www.fairchildsemi.com/evaluate/package-specifications/packageDetails.html?id=PN_PSOFA-008
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol
Parameter
VDSS VGS
ID
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current - Continuous (VGS=10) (Note 1) Pulsed Drain Current
EAS Single Pulse Avalanche Energy
PD
Power Dissipation Derate Above 25oC
TJ, TSTG RθJC RθJA
Operating and Storage Temper...
Similar Datasheet
- FDBL0110N60 MOSFET - Fairchild Semiconductor