FDMC86265P

FDMC86265P P-Channel PowerTrench® MOSFET August 2016 FDMC86265P P-Channel PowerTrench® MOSFET -150 V, -2.6 A, 1.2 Ω Features General Description „ Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -1 A „ Max rDS(on) = 1.4 Ω at VGS = -6 V, ID = -0.9 A „ Very Low RDS-on Mid Voltage P-channel Silicon Technology Optimised for Low Qg This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been optimized for the on-state resistance and yet maintain superior switching performance. „ This product is optimised for fast switching applications as well as load switch applications. „ 100% UIL Tested „ RoHS Compliant Applications „ Active Clamp Switch „ Load Switch Top Bottom Pin 1 S SG S MLP 3.3x3.3 DD D D S S S G D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted. Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Continuous -Pul...