FDMC86261P P-Channel PowerTrench® MOSFET
June 2014
FDMC86261P
P-Channel PowerTrench® MOSFET
-150 V, -9 A, 160 mΩ
Features
Max rDS(on) = 160 mΩ at VGS = -10 V, ID = -2.4 A Max rDS(on) = 185 mΩ at VGS = -6 V, ID = -2.2 A Very low RDS-on mid voltage P channel silicon technology
optimised for low Qg
This product is optimised for fast switching applica...
