FDMC4435BZ P-Channel Power Trench® MOSFET
FDMC4435BZ
P-Channel Power Trench® MOSFET
-30 V, -18 A, 20 mΩ
November 2015
Features
General Description
Max rDS(on) = 20 mΩ at VGS = -10 V, ID = -8.5 A Max rDS(on) = 37 mΩ at VGS = -4.5 V, ID = -6.3 A Extended VGSS range (-25 V) for battery applications High performance trench technology for extremely l...
