FDMC510P

FDMC510P P-Channel PowerTrench® MOSFET FDMC510P P-Channel PowerTrench® MOSFET -20 V, -18 A, 8.0 mΩ Features „ Max rDS(on) = 8.0 mΩ at VGS = -4.5 V, ID = -12 A „ Max rDS(on) = 9.8 mΩ at VGS = -2.5 V, ID = -10 A „ Max rDS(on) = 13 mΩ at VGS = -1.8 V, ID = -9.3 A „ Max rDS(on) = 17 mΩ at VGS = -1.5 V, ID = -8.3 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ 100% UIL Tested „ Termination is Lead-free and RoHS Compliant „ HBM ESD capability level >2 KV typical (Note 4) June 2014 General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been optimized for rDS(ON), switching performance and ruggedness. Applications „ Battery Management „ Load Switch Top Bottom Pin 1 S SG S DD D D MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter ...