FDMC610P

FDMC610P P-Channel PowerTrench® MOSFET FDMC610P P-Channel PowerTrench® MOSFET -12 V, -80 A, 3.9 mΩ Features „ Max rDS(on) = 3.9 mΩ at VGS = -4.5 V, ID = -22 A „ Max rDS(on) = 6.4 mΩ at VGS = -2.5 V, ID = -16 A „ State-of-the-art switching performance „ Lower output capacitance, gate resistance, and gate charge boost efficiency „ Shielded gate technology reduces switch node ringing and increases immunity to EMI and cross conduction „ RoHS Compliant November 2013 General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. Applications „ High side switching for high end computing „ High power density DC-DC synchronous buck converter Pin 1 D D D D S S D D G S S S Pin 1 S G D D T...