MOSFET
FDMC86139P P-Channel PowerTrench® MOSFET
FDMC86139P
P-Channel PowerTrench® MOSFET
-100 V, -15 A, 67 mΩ
June 2014
Feat...
Description
FDMC86139P P-Channel PowerTrench® MOSFET
FDMC86139P
P-Channel PowerTrench® MOSFET
-100 V, -15 A, 67 mΩ
June 2014
Features
General Description
Max rDS(on) = 67 mΩ at VGS = -10 V, ID = -4.4 A Max rDS(on) = 89 mΩ at VGS = -6 V, ID = -3.6 A Very low RDS-on mid voltage P channel silicon technology
optimised for low Qg
This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology. This
very high density process is especially tailored to minimize
on-state resistance and optimized for superior switching
performance.
This product is optimised for fast switching applications as well as load switch applications
100% UIL Tested RoHS Compliant
Applications
Active Clamp Switch Load Switch
Top Bottom
Pin 1 SS S G
S S
D D
D D D D
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous -...
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