MOSFET
FDMC86102L N-Channel Shielded Gate PowerTrench® MOSFET
FDMC86102L
N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 18...
Description
FDMC86102L N-Channel Shielded Gate PowerTrench® MOSFET
FDMC86102L
N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 18 A, 23 mΩ
June 2014
Features
General Description
Shielded Gate MOSFET Technology
Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 34 mΩ at VGS = 4.5 V, ID = 5.5 A Low Profile - 1 mm max in Power 33 RoHS Compliant
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Application
DC - DC Conversion
Top Bottom
Pin 1
SS S G
S S
D D
MLP 3.3x3.3
D D D D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous -Continuous -Pulsed
TC = 25 °C TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C...
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