FDMC86320 N-Channel Power Trench® MOSFET
FDMC86320
N-Channel Power Trench® MOSFET
80 V, 22 A, 11.7 mΩ
June 2014
Features
General Description
Max rDS(on) = 11.7 mΩ at VGS = 10 V, ID = 10.7 A Max rDS(on) = 16 mΩ at VGS = 8 V, ID = 8.5 A MSL1 robust package design 100% UIL Tested RoHS Compliant
This N-Channel MOSFET has been designed specificall...
