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FDMC8882 N-Channel Power Trench® MOSFET
FDMC8882
N-Channel Power Trench® MOSFET
30 V, 16 A, 14.3 m:
May 2014
Features
General Description
Max rDS(on) = 14.3 m: at VGS = 10 V, ID = 10.5 A Max rDS(on) = 22.5 m: at VGS = 4.5 V, ID = 8.3 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Application
High side in DC - DC Buck Converters
Notebook battery power management
Load switch in Notebook
Top Bottom
Pin 1
S SG S
MLP 3.3x3.3
DD D D
D5 D6 D7 D8
4G 3S 2S 1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Vo.