FDMC7572S N-Channel Power Trench® SyncFETTM
August 2011
FDMC7572S
N-Channel Power Trench® SyncFETTM
25 V, 40 A, 3.15 mΩ
Features
General Description
Max rDS(on) = 3.15 mΩ at VGS = 10 V, ID = 22.5 A Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A Advanced Package and Silicon combination for low rDS(on)
and high efficiency
SyncFET Schottky Body Dio...
