FDMS3500

FDMS3500 N-Channel Power Trench® MOSFET October 2014 FDMS3500 N-Channel Power Trench® MOSFET 75V, 49A, 14.5m: tm Features General Description „ Max rDS(on) = 14.5m: at VGS = 10V, ID = 11.5A „ Max rDS(on) = 16.3m: at VGS = 4.5V, ID = 10A „ Advanced Package and Silicon combination for low rDS(on) „ MSL1 robust package design This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. „ 100% UIL Tested Application „ RoHS Compliant „ DC - DC Conversion Top Bottom Pin 1 S S S G D D D D Power 56 D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25°C TC = 25°C TA = 25°C Single Pulse Av...