FDMS8333L

FDMS8333L N-Channel PowerTrench® MOSFET December 2014 FDMS8333L N-Channel PowerTrench® MOSFET 40 V, 76 A, 3.1 mΩ Features „ Max rDS(on) = 3.1 mΩ at VGS = 10 V, ID = 22 A „ Max rDS(on) = 4.3 mΩ at VGS = 4.5 V, ID = 19 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. Applications „ OringFET / Load Switching „ Synchronous rectification „ DC-DC Conversion Pin 1 Top Bottom Pin 1 S S S G Power 56 D D D D S S S G D D D D MOSFET Maximum Ratings TA...