MOSFET
FDMS8350L N-Channel PowerTrench® MOSFET
March 2015
FDMS8350L
N-Channel PowerTrench® MOSFET
40 V, 290 A, 0.85 mΩ
Featur...
Description
FDMS8350L N-Channel PowerTrench® MOSFET
March 2015
FDMS8350L
N-Channel PowerTrench® MOSFET
40 V, 290 A, 0.85 mΩ
Features
Max rDS(on) = 0.85 mΩ at VGS = 10 V, ID = 47 A Max rDS(on) = 1.2 mΩ at VGS = 4.5 V, ID = 38 A Advanced Package and Silicon combination for low rDS(on)
and high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Applications
Primary DC-DC MOSFET Secondary Synchronous Rectifier Load Switch
Top Pin 1
Bottom S Pin 1 S S G
S S
D D D D
Power 56
S G
D D D D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous -Continuous -Continuous -Pulsed
TC = 25 °C TC ...
Similar Datasheet
- FDMS8350L MOSFET - Fairchild Semiconductor