FDMS7682

FDMS7682 N-Channel PowerTrench® MOSFET January 2015 FDMS7682 N-Channel PowerTrench® MOSFET 30 V, 6.3 mΩ Features „ Max rDS(on) = 6.3 mΩ at VGS = 10 V, ID = 14 A „ Max rDS(on) = 10.4 mΩ at VGS = 4.5 V, ID = 11 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. Applications „ IMVP Vcore Switching for Notebook „ VRM Vcore Switching for Desktop and server „ OringFET / Load Switching „ DC-DC Conversion Top Bottom Pin 1 S S S G D5 D6 4G 3S D D D D Po...