FDT3N40

FDT3N40 N-Channel UniFETTM MOSFET FDT3N40 N-Channel UniFETTM MOSFET 400 V, 2.0 A, 3.4 Features RDS(on) = 3.4 Ω (Max.) @ VGS = 10 V, ID = 1.0 A Low Gate Charge (Typ. 4.5 nC) Low Crss (Typ. 3.7 pF) 100% Avalanche Tested Applications LCD/LED TV Lighting Uninterruptible Power Supply April 2013 Description UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D S G SOT-223 Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed Gate-Source ...