FDMS7580

FDMS7580 N-Channel Power Trench® MOSFET October 2014 FDMS7580 N-Channel Power Trench® MOSFET 25 V, 7.5 mΩ Features General Description „ Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 15 A „ Max rDS(on) = 11.1 mΩ at VGS = 4.5 V, ID = 12 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery „ MSL1 robust package design This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. Applications „ Control MOSFET for Synchronous Buck Converters „ 100% UIL tested „ Notebook „ RoHS Compliant „ Server „ Telecomm „ High Efficiency DC-DC Switch Mode Power Supplies Top Bottom Pin 1 S S S G D5 D6 ...