FDMD8280 Dual N-Channel PowerTrench® MOSFET
October 2014
FDMD8280
Dual N-Channel Power Trench® MOSFET
80 V, 40 A, 8.2 mΩ
Features
General Description
Max rDS(on) = 8.2 mΩ at VGS = 10 V, ID = 11 A Max rDS(on) = 11 mΩ at VGS = 8 V, ID = 9.5 A Ideal for flexible layout in primary side of bridge topology
Termination is Lead-free and RoHS Compliant ...
